Two-Dimensional Materials Heterostructure Transistor

Two-dimensional (2D) materials such as graphene (GN), Molybdenum Disulfide (MoS2), and hexagonal Boron Nitride (hBN) shows promising potential in fabricating a new generation of transistors with lower power consumption, higher integration density, and faster response rate. Here, we present our recent work on 2D materials transistors. Starting from mechanical exfoliation, the 2D materials are prepared on different substrates. Characterizations via Raman spectrometry and atomic force microscopy (AFM) show mono- or bi-layers features, and relatively smooth surface geometry for 2D materials. By using deterministic transfer and micro-nano processing techniques, we fabricate a MoS2 transistor gated by hBN. Electrical measurement shows that the on/off ratio at room temperature is >200. This work sheds new light on applications of 2D logical devices and paves a way to discover of new phenomena in 2D physics world.